???`? ? ?? dimension:mm ????g?R ollector-mitter oltage ` ? g R ate-mitter oltage ollector urrent p ? ollector ower issipation unction emperature ange torage emperature ange ~ F R(erminal to ase ,inute) solation oltage , odule ase to eatsink ounting orque usbar to ain erminal . ? (kgf?cm) . . . ollector-mitter ut-ff urrent = 1200v, = 0v . ` ? ate-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 100a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 100ma . . nput apacitance = 10v, = 0v,= 1mh 8,300 N r g ise ime . . `??rg urn-on ime . . r g all ime . . ???rg witching ime `???rg urn-off ime = 600v l = 6 g = 10 = 15v . . ? ?`?`??`? orward urrent . . . R eak orward oltage = 100a, = 0v . . r g everse ecovery ime = 100a, = -10v i/t= 200a/s . . ? . . . . hermal mpedance iode th(j-c) junction to case . 5(e1) 4(g1) (c1) 3 (e2) 2 (c2e1) 1 3-m5 12 11 12 11 12 2-? 5. 5 5 4 12 35 4 0.25 80 94 1 2 3 23 23 17 6 8 4-f ast en tab #110 t= 0.5 16 16 16 7 7 30 +1.0 - 0.5 23 label
???`? ?? 0246810 0 50 100 150 200 collector to emitter voltage v ce (v) collector current i c (a) fig.1- output characteristics (typical) t c =25 10v 9v 12v 15v v ge =20v 8v 7v 0 4 8 121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.2- collector to emitter on voltage vs. gate to emitter voltage (typical) t c =25 100a i c =50a 200a 0 4 8 121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.3- collector to emitter on voltage vs. gate to emitter voltage (typical) i c =50a 100a 200a t c =125 0 2 4 6 8 10 12 14 16 0 150 300 450 600 750 0 100 200 300 400 500 600 700 800 total gate charge qg (nc) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) fig.4- gate charge vs. collector to emitter voltage (typical) v ce =600v 400v 200v r l =6 t c =25 0.1 0.2 0.5 1 2 5 10 20 50 100 200 50 100 200 500 1000 2000 5000 10000 20000 50000 collector to emitter voltage v ce (v) capacitance c (pf) fig.5- capacitance vs. collector to emitter voltage (typical) cies coes cres v ge =0v f=1mh z t c =25 0 25 50 75 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 collector current i c (a) switching time t (s) fig.6- collector current vs. switching time (typical) t off t f t r t on v cc =600v r g =10 v ge =15v t c =25
???`? ?? 01234 0 50 100 150 200 forward voltage v f (v) forward current i f (a) fig.8- forward characteristics of free wheeling diode (typical) t c =25 t c =125 0 100 200 300 400 500 600 1 2 5 10 20 50 100 200 500 -di/dt (a/s) peak reverse recovery current i rrm (a) reverse recovery time trr (ns) fig.9- reverse recovery characteristics (typical) i rrm trr i f =100a t c =25 5 10 20 50 100 200 0.05 0.1 0.2 0.5 1 2 5 10 series gate impedance r g () switching time t (s) fig.7- series gate impedance vs. switching time (typical) v cc =600v i c =100a v ge =15v t c =25 tf tr ton toff 10 -5 10 -4 10 -3 10 -2 10 -1 110 1 2x10 -3 5x10 -3 1x10 -2 2x10 -2 5x10 -2 1x10 -1 2x10 -1 5x10 -1 1 time t (s) transient thermal impedance rth (j-c) (/w) fig.11- transient thermal impedance t c =25 1 shot pulse frd igbt 0 400 800 1200 1600 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 collector to emitter voltage v ce (v) collector current i c (a) fig.10- reverse bias safe operating area r g =10 v ge =15v t c Q125
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